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| DPAD/SSTDPAD Series Dual Low-Leakage Pico-Amp Diodes DPAD1 DPAD5 DPAD50 Product Summary Part Number DPAD1 DPAD5/SSTDPAD5 DPAD50 SSTDPAD100 SSTDPAD5 SSTDPAD100 IR Max (pA) -1 -5 -50 -100 Features D Ultralow Leakage: DPAD1 <1 pA D Ultralow Capacitance: DPAD1 <0.8 pF Benefits D Negligible Circuit Leakage Contribution D Circuit "Transparent" Except to Shunt High-Frequency Spikes Applications D Op Amp Input Protection D Multiplexer Overvoltage Protection Description The DPAD/SSTDPAD series of extremely low-leakage diodes provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. These devices feature leakage currents ranging from -1 pA (DPAD1) to -100 pA (SSTDPAD100) to support a wide range of applications. The low-cost, compact, narrow-body SO-8 (SSTDPAD) package allows maximum circuit performance. Tapeand-reel options are avaliable for automated assembly (see Packaging Information). The TO-78 and TO-71 (DPAD) hermetically sealed metal cans are available with full military processing per MIL-S-19500 (see Military Information). TO-78 TO-71 Modified C1 Narrow Body SOIC C1 C1 A1 NC 1 2 3 4 Top View SSTDPAD5 SSTDPAD100 8 7 6 5 NC A2 C2 C2 A1 2 3 Case* Substrate Top View DPAD1 4 C2 A1 Top View *Case and Pin 3 must be floating DPAD5 DPAD50 2 3 C2 1 5 A2 C1 1 4 A2 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70340. Siliconix S-52424--Rev. B, 14-Apr-97 1 DPAD/SSTDPAD Series Absolute Maximum Ratingsa Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . 300_C Total Device Dissipationb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes: a. TA = 25_C unless otherwise noted. b. Derate 4 mW/_C at 25_C. Specificationsa Limits Parameter Static DPAD1 DPAD5/SSTDPAD5 Reverse Current IR VR = -20 V 20 DPAD50 SSTDPAD100 DPAD1 Reverse Breakdown Voltage BVR VF IR = -1 mA DPAD5/DPAD50 SSTDPAD5/SSTDPAD100 Forward Voltage Drop IF = 1 mA -45 -45 -30 -0.2 -2 -5 -10 -60 -55 -50 0.8 1.5 V -1 -5 pA -50 -100 Symbol Test Conditions Min Typb Max Unit Dynamic DPAD1 Reverse Capacitance CR VR = -5V, f = 1 MHz DPAD5/DPAD50 SSTDPAD5/SSTDPAD100 Differential Capacitance CR1 - CR2 VR1 = VR2 = -5 V f = 1 MH MHz DPAD1 All Others 0.6 1.0 2.0 0.07 0.1 0.8 2.0 4.0 0.2 0.5 pF Notes: a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Typical Characteristics -1000 Reverse Current vs. Reverse Voltage DPAD/SSTDPAD5 -100 Reverse Current vs. Temperature VR = -20 V IR @ 125_C -100 DPAD1 I R (pA) -10 DPAD/SSTDPAD5 -1 IR @ 25_C DPAD1 -0.1 0 -6 -12 -18 VR (V) -24 -30 -0.01 -55 -35 -15 5 25 45 65 85 105 125 -0.1 I R (pA) -1 DPAD1 -10 DPAD/SSTDPAD5 TA - Temperature (_C) 2 Siliconix S-52424--Rev. B, 14-Apr-97 |
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